Samsung–Broadcom Alliance Deepens With New AI Semiconductor Deal to 2030

Seoul/San Jose: Samsung Electronics and Broadcom have announced an expanded long term partnership to accelerate development of next generation AI focused semiconductor technologies through 2030, strengthening collaboration across advanced chip design, high performance connectivity solutions, and cutting edge manufacturing.

The renewed agreement deepens joint work on AI accelerators, custom ASICs, and high bandwidth connectivity components used in data centers, cloud infrastructure, and emerging on device AI applications. Both companies said the extension reflects surging global demand for efficient, scalable silicon capable of supporting increasingly complex AI workloads.

Focus on Advanced Nodes and AI Acceleration

Samsung will leverage its leading edge process technologies — including sub 3nm nodes and advanced packaging — to manufacture Broadcom’s next wave of AI and networking chips. Broadcom, meanwhile, will expand co development of custom silicon optimized for AI inference, training, and ultra fast data movement.

Strengthening High Performance Connectivity

The partnership also covers enhanced collaboration on high speed optical interconnects, PCIe solutions, and next generation networking architectures designed to support hyperscale AI clusters. Executives from both companies said these technologies are critical to overcoming bandwidth bottlenecks in modern AI systems.

Long-Term Strategic Alignment

By extending the partnership through 2030, Samsung and Broadcom aim to secure a stronger position in the global semiconductor race, where demand for AI centric chips continues to surge across industries. The companies said the agreement will help accelerate innovation cycles and ensure stable supply for major customers.